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STP7NB60 датащи(PDF) 1 Page - STMicroelectronics |
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STP7NB60 датащи(HTML) 1 Page - STMicroelectronics |
1 / 11 page 1/11 April 2004 STP7NB60 STP7NB60FP N-CHANNEL 600V - 1.0 Ω - 7.2A TO-220/TO-220FP PowerMESH™ MOSFET REV. 2 Table 1. General Features FEATURES SUMMARY ■ TYPICAL RDS(on) = 1.0 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ 100% AVALANCHE TESTED ■ VERY LOW INTRINSIC CAPACITANCES ■ GATE CHARGE MINIMIZED DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstand- ing performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/ dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE Figure 1. Package Figure 2. Internal Schematic Diagram Table 2. Order Codes Type VDSS RDS(on) ID STP7NB60 600 V < 1.2 Ω 7.2 A STP7NB60FP 600 V < 1.2 Ω 4.1 A 1 2 3 TO-220 TO-220FP 1 2 3 Part Number Marking Package Packaging STP7NB60 P7NB60 TO-220 TUBE STP7NB60FP P7NB60FP TO-220FP TUBE |
Аналогичный номер детали - STP7NB60_07 |
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Аналогичное описание - STP7NB60_07 |
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