TPCF8001

2007-01-16

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)

TPCF8001

Notebook PC Applications

Portable Equipment Applications

Characteristics

Symbol

Rating

Unit

Drain-source voltage

30

V

30

V

Gate-source voltage

±20

V

DC

(Note 1)

7

Drain current

Pulse

(Note 1)

28

A

Drain power dissipation

(t

= 5 s)

(Note 2a)

2.5

W

Drain power dissipation

(t

= 5 s)

(Note 2b)

0.7

W

Single-pulse avalanche energy(Note 3)

8

mJ

Avalanche current

3.5

A

Repetitive avalanche energy

(Note 4)

0.25

mJ

Channel temperature

150

°C

Storage temperature range

−55~150

°C

Note: For Notes 1 to 5, refer to the next page

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Handle with care.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-3U1A

Weight: 0.011 g (typ.)

Circuit Configuration

8

6

1

2

3

7

5

4