TPCF8303 datasheet(6/7 Pages) TOSHIBA

номер детали	TPCF8303

подробное описание детали	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)

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производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

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6 / 7 page

TPCF8303

2006-11-16

6

※

Single pulse

Ta = 25℃

Curves must be derated linearly

with increase in temperature.

ID max (pulse) *

100

μs *

1 ms *

VDSS max

Drain-source voltage VDS (V)

Safe Operating Area

-10

-0.1

-100

-10

-1

-100

-1

-0.1

(4)

(3)

(2)

(1)

rth – tw

Pulse width tw (s)

Device mounted on a glass-epoxy board (a) (Note 2a)

(1)Single-device operation (Note 3a)

(2)Single-device value at dual operation (Note 3b)

Device mounted on a glass-epoxy board (b) (Note 2b)

(3)Single-device operation (Note 3a)

(4)Single-device value at dual operation (Note 3b)

Single pulse

0.001

10

100

1000

0.01

0.1

1

10

100

1000

1

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Toshiba Semiconductor	TPCF8303	118Kb / 4P	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)

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Аналогичное описание - TPCF8303

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TPCF8303 датащи(PDF) 6 Page - Toshiba Semiconductor

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Аналогичный номер детали - TPCF8303

Аналогичное описание - TPCF8303

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