поискавой системы для электроныых деталей |
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2SK2493 датащи(PDF) 1 Page - Toshiba Semiconductor |
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2SK2493 датащи(HTML) 1 Page - Toshiba Semiconductor |
1 / 6 page 2SK2493 2006-11-16 1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2493 Chopper Regulator and DC−DC Converter Applications 2.5-V gate drive Low drain−source ON resistance : RDS (ON) = 0.08 mΩ (typ.) High forward transfer admittance : |Yfs| = 8.0 S (typ.) Low leakage current : IDSS = 100 μA (max) (VDS = 16 V) Enhancement mode : Vth = 0.5~1.1 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage VDSS 16 V Drain−gate voltage (RGS = 20 kΩ) VDGR 16 V Gate−source voltage VGSS ±8 V DC (Note 1) ID 5 A Drain current Pulse (Note 1) IDP 20 A Drain power dissipation (Tc = 25°C) PD 20 W Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch−c) 6.25 °C / W Thermal resistance, channel to ambient Rth (ch−a) 125 °C / W Note 1: Ensure that the channel temperature does not exceed 150°C. This transistor is an electrostatic-sensitive device. Please handle with caution. Unit: mm JEDEC ― JEITA SC-64 TOSHIBA 2-7B1B Weight: 0.36 g (typ.) JEDEC ― JEITA ― TOSHIBA 2-7J1B Weight: 0.36 g (typ.) |
Аналогичный номер детали - 2SK2493_06 |
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Аналогичное описание - 2SK2493_06 |
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