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2SK2606 датащи(PDF) 2 Page - Toshiba Semiconductor |
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2SK2606 датащи(HTML) 2 Page - Toshiba Semiconductor |
2 / 3 page 2SK2606 2006-11-10 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±30 V, VDS = 0 V — — ±10 μA Gate−source breakdown voltage V (BR) GSS IG = ±10 μA, VDS = 0 V ±30 — — V Drain cut−off current IDSS VDS = 640 V, VGS = 0 V — — 100 μA Drain−source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 800 — — V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 — 4.0 V Drain−source ON resistance RDS (ON) VGS = 10 V, ID = 4 A, — 1.0 1.2 Ω Forward transfer admittance |Yfs| VDS = 15 V, ID = 4 A 3.0 7.0 — S Input capacitance Ciss — 2160 — Reverse transfer capacitance Crss — 45 — Output capacitance Coss VDS = 25 V, VGS = 0 V, f = 1 MHz — 200 — pF Rise time tr — 25 — Turn−on time ton — 60 — Fall time tf — 25 — Switching time Turn−off time toff — 110 — ns Total gate charge (gate−source plus gate−drain) Qg — 68 — Gate−source charge Qgs — 38 — Gate−drain (“miller”) Charge Qgd VDD ≈ 400 V, VGS = 10 V, ID = 8 A — 30 — nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR — — — 8 A Pulse drain reverse current (Note 1) IDRP — — — 24 A Forward voltage (diode) VDSF IDR = 8 A, VGS = 0 V — — −1.9 V Reverse recovery time trr — 1500 — ns Reverse recovery charge Qrr IDR = 8 A, VGS = 0 V, dIDR / dt = 100 A / μs — 19 — μC Marking K2606 TOSHIBA Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) |
Аналогичный номер детали - 2SK2606_06 |
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Аналогичное описание - 2SK2606_06 |
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