2SK3176

2007-03-16

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (

π-MOS V)

2SK3176

Switching Regulator, DC-DC Converter and Motor Drive

Applications

Characteristics

Symbol

Rating

Unit

Drain-source voltage

200

V

200

V

Gate-source voltage

±20

V

DC (Note 1)

30

Drain current

Pulse (Note 1)

120

A

Drain power dissipation

(Tc

= 25°C)

150

W

Single pulse avalanche energy

(Note 2)

925

mJ

Avalanche current

30

A

Repetitive avalanche energy (Note 3)

15

mJ

Channel temperature

150

°C

Storage temperature range

−55 to 150

°C

Note 1: Please use devices on condition that the channel temperature is below 150

°C.

Note 3: Repetitive rating: pulse width limited by maximum junction temperature.

in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

This transistor is an electrostatic sensitive device.

Please handle with caution.

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

0.833

°C/W

Thermal resistance, channel to ambient

50.0

°C/W

Unit: mm

1. GATE

2. DRAIN (HEAT SINK)

3. SOURCE

JEDEC

⎯

JEITA

SC-65

TOSHIBA

2-16C1B

Weight: 4.6 g (typ.)