поискавой системы для электроныых деталей |
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2SK3376TK датащи(PDF) 1 Page - Toshiba Semiconductor |
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2SK3376TK датащи(HTML) 1 Page - Toshiba Semiconductor |
1 / 7 page 2SK3376TK 2007-11-01 1 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3376TK For ECM • Application for Ultra-compact ECM Absolute Maximum Ratings (Ta=25°C) Characteristic Symbol Rating Unit Gate-Drain voltage VGDO -20 V Gate Current IG 10 mA Drain power dissipation (Ta = 25°C) PD 100 mW Junction Temperature Tj 125 °C Storage temperature range Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). IDSS CLASSIFICATION A-Rank 80 to 200µA B-Rank 170 to 300µA C-Rank 270 to 480µA BK-Rank 150 to 350µA Marking Equivalent Circuit Unit: mm JEDEC - JEITA - TOSHIBA 2-1R1A Weight: 2.2mg (typ.) TESM3 1.Drain 2.Source 3.Gate D G S IDSS Classification Symbol A :A-Rank B :B-Rank , BK-Rank Type Name 3 C :C-Rank 1 2 3 0.8±0.05 1.2±0.05 |
Аналогичный номер детали - 2SK3376TK |
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Аналогичное описание - 2SK3376TK |
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