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TC9WMB4FU датащи(PDF) 11 Page - Toshiba Semiconductor |
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TC9WMB4FU датащи(HTML) 11 Page - Toshiba Semiconductor |
11 / 17 page TC9WMB4FU 2007-10-19 11 Absolute Maximum Ratings (Note) (GND = 0 V) Characteristics Symbol Rating Unit Supply voltage VCC −0.3 to 7.0 V Input voltage VIN −0.3 to VCC + 0.3 V Output voltage VOUT −0.3 to VCC + 0.3 V Power dissipation PD 300 (25°C) mW Storage temperature Tstg −55 to 125 °C Operating temperature Topr −40 to 85 °C Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Operating Ranges (Note) (GND = 0 V, Topr = −40 to 85°C) Characteristics Symbol Test Condition Min Max Unit Supply voltage (for reading) VCC ⎯ 1.8 5.5 V Supply voltage (for writing) VCC ⎯ 2.3 5.5 V 2.3 V ≤ VCC ≤ 5.5 V 0.7 × VCC VCC High-level input voltage VIH 1.8 V ≤ VCC < 2.3 V 0.8 × VCC VCC V 2.3 V ≤ VCC ≤ 5.5 V 0 0.3 × VCC Low-level input voltage VIL 1.8 V ≤ VCC < 2.3 V 0 0.2 × VCC V 2.3 V ≤ VCC ≤ 5.5 V 0 400 Operating frequency fSCL 1.8 V ≤ VCC < 2.3 V 0 100 kHz Note: The operating ranges must be maintained to ensure the normal operation of the device. Unused inputs must be tied to either VCC or GND. |
Аналогичный номер детали - TC9WMB4FU |
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Аналогичное описание - TC9WMB4FU |
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