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TLP3902 датащи(PDF) 2 Page - Toshiba Semiconductor |
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TLP3902 датащи(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page TLP3902 2007-10-01 2 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward Current IF 50 mA Forward Current Derating (Ta ≥ 25°C) ΔIF / °C −0.5 mA / °C Reverse Voltage VR 5 V LED Junction Temperature Tj 125 °C Forward Current IFD 50 μA Reverse Voltage VRD 10 V DETECTOR Junction Temperature Tj 125 °C Storage Temperature Range Tstg −55~125 °C Operating Temperature Range Topr −40~85 °C Lead Soldering Temperature (10 s) Tsol 260 °C Isolation Voltage (AC, 1 min., R.H. ≤ 60%) (Note 1) BVS 2500 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device considered a two terminal device: Pins 1 and 3 shorted together and pins 4 and 6 shorted together. Recommended Operating Conditions (Note 2) Characteristic Symbol Min Typ. Max Unit Forward Current IF 7 — 20 mA Operating Temperature Topr −25 — 65 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Individual Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Forward Voltage VF IF = 10 mA 1.10 1.15 1.3 V Reverse Current IR VR = 5 V — — 10 μA LED Capacitance CT V = 0, f = 1 MHz — 30 — pF Forward Voltage VFD IFD = 10 μA — 9.6 — V Reverse Current IRD VRD = 10 V — 1 — nA DETECTOR Capacitance (Anode to Cathode) CTD V = 0, f = 1 MHz — 8 — pF |
Аналогичный номер детали - TLP3902 |
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Аналогичное описание - TLP3902 |
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