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TLP4007G датащи(PDF) 1 Page - Toshiba Semiconductor |
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TLP4007G датащи(HTML) 1 Page - Toshiba Semiconductor |
1 / 7 page TLP4007G 2007-10-01 1 TOSHIBA Photocoupler Photorelay TLP4007G Telecommunication Measurement Equipment Security Equipment FA The Toshiba TLP4007G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET and is the 1-form-A/B photorelay with 350-V withstanding voltage. • Normally closed (1-form-B) device, normally opened (1-form-A) device • Peak off-state voltage: 350 V (min) • Trigger LED current: 3 mA (max) • On-state current: 100 mA (max) • On-state resistance: 50 Ω (max) • Isolation voltage: 2500 Vrms (min) Pin Configuration (top view) Unit: mm JEDEC ― JEITA ― TOSHIBA 11-10C4 Weight: 0.54 g (typ.) 1 2 8 7 1: Anode (1b) 2: Cathode (1b) 3: Anode (1a) 4: Cathode (1a) 5: Drain D1 (1a) 6: Drain D2 (1a) 7: Drain D3 (1b) 8: Drain D4 (1b) 6 5 3 4 |
Аналогичный номер детали - TLP4007G |
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Аналогичное описание - TLP4007G |
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