1SV304

2007-11-01

1

TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type

1SV304

VCO for VHF Band Radio

• Small package

Characteristics

Symbol

Rating

Unit

Reverse voltage

10

V

Junction temperature

125

°C

Storage temperature range

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Reverse voltage

10

⎯

⎯

V

Reverse current

⎯

⎯

3

nA

Capacitance

17.3

18.3

19.3

pF

Capacitance

5.3

6.1

6.6

pF

Capacitance ratio

⎯

2.8

3

⎯

⎯

Series resistance

⎯

0.27

0.32

Ω

Marking

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

1-1E1A

Weight: 0.004 g (typ.)