поискавой системы для электроныых деталей |
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TLP557 датащи(PDF) 2 Page - Toshiba Semiconductor |
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TLP557 датащи(HTML) 2 Page - Toshiba Semiconductor |
2 / 7 page TLP557 2007-10-01 2 Absolute Maximum Ratings Characteristic Symbol Rating Unit Forward current IF 25 mA Peak transient forward current (Note 1) IFPT 1 A Reverse voltage VR 5 V Junction temperature (Tj) 125 °C Output current (f ≤ 5kHz, Duty ≤ 50%) IO +0.32 / −0.32 A Peak output current (PW ≤ 10μs, f ≤ 5kHz) IOP +2 / −0.5 A Output voltage VO 16 V Supply voltage VCC 16 V O1 terminal to O2 terminal (pin 7 −pin 6) voltage V1−2 1.5 V O2 terminal to O1 terminal (pin 6 −pin 7) voltage V2−1 5 V Power dissipation (Note 2) Po 0.5 W Junction temperature (Tj) 125 °C Total package power dissipation (Note 3) POT 0.55 W Operating temperature range Topr −30~70 °C Storage temperature range Tstg −55~125 °C Lead solder temperature (10 s) Tsol 260 °C Isolation voltage (AC, 1 min., R.H.≤ 60%, Ta=25°C) (Note 4) BVS 2500 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1) Pulse width PW ≤ 1μs, 300pps (Note 2) ΔPo / °C=−6.7mW / °C (Ta ≥ 50°C) (Note 3) ΔPOT / °C=−7.4mW / °C (Ta ≥ 50°C) (Note 4) Device considered a two terminal device: Pins 1, 2, 3 and 4 shorted together, and pins 5, 6, 7 and 8 shorted together. |
Аналогичный номер детали - TLP557_07 |
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Аналогичное описание - TLP557_07 |
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