поискавой системы для электроныых деталей |
|
TLP541G датащи(PDF) 2 Page - Toshiba Semiconductor |
|
TLP541G датащи(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page TLP541G, TLP542G 2002-09-25 2 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current IF 70 mA Forward current derating (Ta ≥ 25°C) ΔIF / °C −0.7 mA / °C Peak forward current (100 μs pulse, 100 pps) IFP 1 A Reverse voltage VR 5 V Junction temperature Tj 125 °C Peak forward voltage (RGK = 27kΩ) VDRM 400 V Peak reverse voltage (RGK = 27kΩ) VRRM 400 V On −state current IT (RMS) 150 mA On −state current derating (Ta ≥ 25°C) ΔIT / °C −2.0 mA / °C Peak one cycle surge current ITSM 2 A Peak reverse gate voltage VGM −5 V Junction temperature Tj 100 °C Storage temperature range Tstg −55~125 °C Operating temperature range Topr −30~100 °C Lead soldering temperature (10 s) Tsol 260 °C Isolation voltage (AC, 1 min., R.H. ≤ 60%) (Note) BVS 2500 Vrms (Note) Device considered a two terminal device: LED side pins shorted together and detector side pins shorted together. Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage VAC ― ― 120 Vac Forward current IF 10 16 25 mA Operating temperature Topr −30 ― 85 °C Gate to cathode resistance RGK ― 27 33 kΩ Gate to cathode capacity CGK ― 0.01 0.1 μF |
Аналогичный номер детали - TLP541G |
|
Аналогичное описание - TLP541G |
|
|
ссылки URL |
Конфиденциальность |
ALLDATASHEETRU.COM |
Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |