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TLP350F датащи(PDF) 1 Page - Toshiba Semiconductor |
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TLP350F датащи(HTML) 1 Page - Toshiba Semiconductor |
1 / 2 page TLP350F 2007-10-01 1 TOSHIBA Photocoupler GaAℓAs IRED + Photo IC TLP350F Industrial Inverter Inverter for Air Conditioner IGBT/Power MOSFET Gate Drive IH(Induction Heating) The TOSHIBA TLP350F consists of a GaAℓAs light-emitting diode and an integrated photodetector. This unit is an 8-lead DIP package. The TLP350F is suitable for gate driving IGBTs or power MOSFETs. Absolute maximum ratings and electrical characteristics are the same as TLP350technical datasheet. • Peak output current: IO = ±2.5A (max) • Guaranteed performance over temperature: −40 to 100°C • Supply current:ICC = 2 mA (max) • Power supply voltage: VCC = 15 to 30 V • Threshold input current : IFLH = 5 mA (max) • Switching time (tpLH/tpHL) : 500 ns (max) • Common mode transient immunity: 15 kV/μs • Isolation voltage: 3750 Vrms • UL Recognized : UL1577,File No.E67349 • Option(D4) VDE Approved : DIN EN 60747-5-2 Maximum Operating Insulation Voltage : 1140VPK Highest Permissible Over Voltage : 6000VPK (Note): When an EN60747-5-2 approved type is needed, Please designate “Option(D4)” • Construction mechanical rating Truth Table Input LED Tr1 Tr2 Output H ON ON OFF H L OFF OFF ON L Unit: mm TOSHIBA 11-10C402 Weight: 0.54 g (typ.) 8 1: NC 2: Anode 3: Cathode 4: NC 5: GND 6: VO (output) 7: NC 8: VCC 7 6 5 1 2 3 4 A 0.1 μF bypass capacitor must be connected between pins 8 and 5. (See Note 6) 2 + 3 − VCC VO GND (Tr1) (Tr2) ICC IO IF VF 8 6 5 7.62mm pitch TLP350 type 10.16mm pitch TLP350F type Creepage distance Clearance Insulation thickness 6.4 mm (min) 6.4 mm (min) 0.4 mm (min) 8.0 mm (min) 8.0 mm (min) 0.4 mm (min) Pin Configuration (top view) Schematic |
Аналогичный номер детали - TLP350F |
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Аналогичное описание - TLP350F |
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