TA4012AFE

2007-11-01

1

TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic

TA4012AFE

UHF Wide Band Amplifier Applications

Features

• Wide band: f = 2.0 GHz (3dB down)

Characteristics

Symbol

Rating

Unit

Supply voltage 1

2.2

V

Supply voltage 2

(Note 1)

3

V

Total power dissipation

(Note 2)

300

mW

Operating temperature

−40~85

°C

Storage temperature

−55~150

°C

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 2: When mounted on the glass epoxy of 2.5 cm

Marking

Weight: 0.003 g (typ.)

OUT

U 4

COLLECTOR

IN

5

4

1

2

3