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TC7PA17FU датащи(PDF) 1 Page - Toshiba Semiconductor |
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TC7PA17FU датащи(HTML) 1 Page - Toshiba Semiconductor |
1 / 8 page TC7PA17FU 2007-11-01 1 TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7PA17FU Dual Schmitt Buffer Features • Operating voltage range: VCC = 1.8~3.6 V • High-speed operation: tpd = 4.0 ns (max) at VCC = 3.0~3.6 V tpd = 4.3 ns (max) at VCC = 2.3~2.7 V tpd = 8.6 ns (max) at VCC = 1.8 V • High-level output current: IOH/IOL = ±24 mA (min) at VCC = 3.0 V IOH/IOL = ±18 mA (min) at VCC = 2.3 V IOH/IOL = ±6 mA (min) at VCC = 1.8 V • 3.6-V tolerant inputs • 3.6-V power down protection outputs Absolute Maximum Ratings (Ta = 25°C) Pin Assignment (top view) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: VCC = 0 V Note 2: High or Low state. IOUT absolute maximum rating must be observed. Note 3: VOUT < GND Weight: 0.0068 g (typ.) Characteristics Symbol Value Unit Power supply voltage VCC −0.5~4.6 V DC input voltage VIN −0.5~4.6 V −0.5~4.6 (Note 1) DC output voltage VOUT −0.5~VCC + 0.5 (Note 2) V Input diode current IIK −50 mA Output diode current IOK −50 (Note 3) mA DC output current IOUT ±50 mA Power dissipation PD 200 mW DC VCC/ground current ICC ±100 mA Storage temperature Tstg −65~150 °C Product name E A L Marking VCC 6 4 1A GND 2A 2Y 1 2 3 5 1Y |
Аналогичный номер детали - TC7PA17FU |
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Аналогичное описание - TC7PA17FU |
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