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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TD62064BF датащи(PDF) 3 Page - Toshiba Semiconductor |
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TD62064BF датащи(HTML) 3 Page - Toshiba Semiconductor |
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3 / 11 page  TD62064BP-1/BF 2006-06-14 3 RECOMMENDED OPERATING CONDITIONS (Ta = −40~85°C) CHARACTERISTIC SYMBOL CONDITION MIN TYP. MAX UNIT Output Sustaining Voltage VCE(SUS) 0 ― 80 V DC 1 Circuit, Ta = 25°C 0 ― 1250 Duty = 10 % 0 ― 1250 BP−1 (Note 1) Duty = 50 % 0 ― 380 Duty = 10 % 0 ― 900 Output Current BF (Note 2) IOUT Tpw = 25ms 4 Circuits Tj = 120°C Ta = 85°C Duty = 50 % 0 ― 170 mA / ch VIN 0 ― 5.5 V (Output On) VIN(ON) IOUT = 1.25 A 2.5 ― 8 V Input Voltage (Output Off) VIN(OFF) 0 ― 0.4 V Input Current IIN 0 ― 20 mA Clamp Diode Reverse Voltage VR 0 ― 80 V Clamp Diode Forward Current IF ― ― 1.25 A BP−1 Ta = 85°C (Note 1) ― ― 1.4 Power Dissipation BF PD Ta = 85°C (Note 2) ― ― 0.7 W Note 1: On Glass Epoxy PCB (50 × 50 × 1.6 mm Cu 50%) Note 2: On Glass Epoxy PCB (60 × 30 × 1.6 mm Cu 30%) ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted) CHARACTERISTIC SYMBOL TEST CIR− CUIT TEST CONDITION MIN TYP. MAX UNIT VCE = 80 V, Ta = 25°C ― ― 50 Output Leakage Current ICEX 1 VCE = 80 V, Ta = 85°C ― ― 100 µA IOUT = 1.25 A, VIN = 2.4 V ― ― 1.6 Output Saturation Voltage VCE(sat) 2 IOUT = 0.75 A, VIN = 2.4 V ― ― 1.25 V DC Current Transfer Ratio hFE 2 VCE = 2 V, IOUT = 1.25 A ― 1500 ― Input Voltage (Output On) VIN (ON) 3 IOUT = 1.25 A, IIN = 2 mA ― ― 2.4 V VR = 80 V, Ta = 25°C ― ― 50 Clamp Diode Leakage Current IR 4 VR = 80 V, Ta = 85°C ― ― 100 µA Clamp Diode Forward Voltage VF 5 IF = 1.25 A ― 1.5 2.0 V Input Capacitance CIN 6 VIN = 0, f = 1 MHz ― 15 ― pF Turn−On Delay tON ― 0.1 ― Turn−Off Delay tOFF 7 VOUT = 80 V, RL = 68 Ω ― 1.0 ― µs Parasitic Transistor Output Voltage VCEF 8 ICEF = 150 mA 80 ― ― V |
Аналогичный номер детали - TD62064BF |
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Аналогичное описание - TD62064BF |
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