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TLP126 датащи(PDF) 2 Page - Toshiba Semiconductor

номер детали TLP126
подробное описание детали  Photo−Transistor Programmable Controllers
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLP126 датащи(HTML) 2 Page - Toshiba Semiconductor

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TLP126
2007-10-01
2
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
IF(RMS)
50
mA
Forward current derating (Ta≥ 53°C) Δ
ΔIF / °C
−0.7
mA / °C
Peak forward current(100μs pulse,100pps)
IFP
1
A
Junction temperature
Tj
125
°C
Collector
−emitter voltage
VCEO
80
V
Emitter
−collector voltage
VECO
7
V
Collector current
IC
50
mA
Peak collector current(10ms pulse,100pps)
ICP
100
mA
Power dissipation
PC
150
mW
Power dissipation derating (Ta ≥ 25°C)
ΔPC / °C
−1.5
mW / °C
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−55~125
°C
Operating temperature range
Topr
−55~100
°C
Lead soldering temperature(10 sec.)
Tsold
260
°C
Total package power dissipation
PT
200
mW
Total package power dissipation derating (Ta≥25°C)
ΔPT / °C
−2.0
mW / °C
Isolation voltage (AC, 1min., RH ≤ 60%)
(Note 1)
BVS
3750
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1) Device considered a two terminal device: Pins1, and 3 shorted together and 4 and 6 shorted together.
Recommended Operating Conditions
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Supply voltage
VCC
5
48
V
Forward current
IF(RMS)
1.6
20
mA
Collector current
IC
1
10
mA
Operating temperature
Topr
−25
75
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.


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