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TLP137 датащи(PDF) 2 Page - Toshiba Semiconductor |
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TLP137 датащи(HTML) 2 Page - Toshiba Semiconductor |
2 / 9 page TLP137 2007-10-01 2 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current IF 50 mA Forward current derating (Ta ≥ 53°C) ΔIF / °C −0.7 mA / °C Peak forward current (100μs pulse, 100pps) IFP 1 A Reverse voltage VR 5 V Junction temperature Tj 125 °C Collector −emitter voltage VCEO 80 V Collector −base voltage VCBO 80 V Emitter −collector voltage VECO 7 V Emitter −base voltage VEBO 7 V Collector current IC 50 mA Peak collector current (10ms pulse, 100pps) ICP 100 mA Power dissipation PC 150 mW Power dissipation derating (Ta ≥ 25°C) ΔPC / °C −1.5 mW / °C Junction temperature Tj 125 °C Storage temperature range Tstg −55~125 °C Operating temperature range Topr −55~100 °C Lead soldering temperature (10s) Tsol 260 °C Total package power dissipation PT 200 mW Total package power dissipation derating (Ta ≥ 25°C) ΔPT / °C −2.0 mW / °C Isolation voltage (AC, 1min., RH ≤ 60%) (Note 1) BVS 3750 V r m s Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1) Device considered a two terminal device: Pins 1 and 3 shorted together and pins 4, 5 and 6 shorted together. |
Аналогичный номер детали - TLP137 |
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Аналогичное описание - TLP137 |
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