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TLP181 датащи(PDF) 3 Page - Toshiba Semiconductor

номер детали TLP181
подробное описание детали  Photocoupler GaAs Ired & Photo−Transistor
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLP181 датащи(HTML) 3 Page - Toshiba Semiconductor

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TLP181
2007-10-01
3
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
IF
50
mA
Forward current detating
ΔIF / °C
−0.7 (Ta ≥ 53°C)
mA / °C
Pulse forward current
(100μs pulse, 100pps)
IFP
1
A
Reverse voltage
VR
5
V
Junction temperature
Tj
125
°C
Collector
−emitter voltage
VCEO
80
V
Emitter
−collector voltage
VECO
7
V
Collector current
IC
50
mA
Collector power dissipation
(1 Circuit)
PC
150
mW
Collector power dissipation
derating (1 Circuit Ta ≥ 25°C)
ΔPC / °C
−1.5
mW / °C
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−55~125
°C
Operating temperature range
Topr
−55~100
°C
Lead soldering temperature
Tsol
260 (10s)
°C
Total package power dissipation
PT
200
mW
Total package power dissipation
derating (Ta ≥ 25°C)
ΔPT / °C
−2.0
mW / °C
Isolation voltage
(AC, 1min., R.H. ≤ 60%)
(Note 1)
BVS
3750
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1) Device considered a two
−terminal device: Pin1, 3 shorted together and pins 4, 6 shorted together
Recommended Operating Conditions
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Supply voltage
VCC
5
48
V
Forward current
IF
16
20
mA
Collector current
IC
1
10
mA
Operating temperature
Topr
−25
85
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.


Аналогичный номер детали - TLP181_07

производительномер деталидатащиподробное описание детали
logo
Toshiba Semiconductor
TLP181 TOSHIBA-TLP181_02 Datasheet
152Kb / 9P
   GaAs Ired and Photo−Transistor
More results

Аналогичное описание - TLP181_07

производительномер деталидатащиподробное описание детали
logo
Toshiba Semiconductor
TLP180 TOSHIBA-TLP180_07 Datasheet
166Kb / 8P
   Photocoupler GaAs Ired & Photo−Transistor
TLP176G TOSHIBA-TLP176G_07 Datasheet
189Kb / 7P
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TLP166J TOSHIBA-TLP166J Datasheet
136Kb / 4P
   Photocoupler GaAs Ired Photo−Triac
TLP747GF TOSHIBA-TLP747GF Datasheet
105Kb / 2P
   TOSHIBA Photocoupler GaAs Ired & Photo−Thyristor
TLP280 TOSHIBA-TLP280_07 Datasheet
220Kb / 9P
   GaAs Ired & Photo−Transistor
TLP320 TOSHIBA-TLP320_07 Datasheet
231Kb / 7P
   GaAs Ired & Photo−Transistor
TLP330 TOSHIBA-TLP330_07 Datasheet
175Kb / 6P
   GaAs Ired & Photo−Transistor
TLP331 TOSHIBA-TLP331_07 Datasheet
193Kb / 8P
   GaAs Ired & Photo−Transistor
TLP421F TOSHIBA-TLP421F_07 Datasheet
145Kb / 3P
   GaAs IRed & Photo−Transistor
TLP523 TOSHIBA-TLP523_07 Datasheet
262Kb / 7P
   GaAs Ired & Photo−Transistor
More results


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