STB11NM80_07 datasheet(4/17 Pages) STMICROELECTRONICS

номер детали	STB11NM80

подробное описание детали	N-channel 800 V - 0.35 廓 - 11 A - TO-220/FP- D2PAK - TO-247 MDmesh??Power MOSFET

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Electrical characteristics

STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80

4/17

2

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 µA, VGS= 0

800

V

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating @125°C

10

100

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±30 V

100

nA

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

34

5

V

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 5.5 A

0.35

0.40

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

1.

Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward transconductance

VDS > ID(on) x RDS(on)max,

ID= 7.5A

8S

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25 V, f=1 MHz,

VGS=0

1630

750

30

pF

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=640 V, ID = 11 A

VGS =10 V

(see Figure 10)

43.6

11.6

21

nC

Rg

Gate input resistance

f=1MHz Gate DC Bias=0

Test signal level=20 mV

Open drain

2.7

Ω

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD=400 V, ID= 5.5 A,

RG=4.7 Ω, VGS=10 V

(see Figure 17)

22

17

46

15

ns

Аналогичный номер детали - STB11NM80_07

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STB11NM80	908Kb / 22P	N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET in D²PAK, TO-220FP, I²PAK, TO-220, TO-247 September 2011

More results

Аналогичное описание - STB11NM80_07

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STP11NM80	949Kb / 17P	N-channel 800 V, 0.35 廓, 11 A MDmesh??Power MOSFET TO-220, TO-220FP, D2PAK, TO-247
	STB23NM60N	554Kb / 19P	N-channel 600 V - 0.150 廓 - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh??Power MOSFET
	STP11NM80	582Kb / 14P	N-CHANNEL 800V - 0.35ohm - 11A TO-220/FP/D2PAK/TO-247 MDmesh Power MOSFET
	STB12NM60N	591Kb / 18P	N-channel 600V - 0.35廓 - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh??Power MOSFET
	STP25NM60N	523Kb / 18P	N-channel 600V - 0.140廓 - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh??Power MOSFET
	STB13NM50N	622Kb / 17P	N-channel 500V - 0.250廓 - 12A - TO-220/FP - TO-247-I2/D2PAK Second generation MDmesh??Power MOSFET
	STB25NM50N	514Kb / 18P	N-channel 500V - 0.11廓 - 22A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh??Power MOSFET
	STB11NM80	908Kb / 22P	N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET in D²PAK, TO-220FP, I²PAK, TO-220, TO-247 September 2011
	STB14NM65N	550Kb / 18P	N-channel 650 V, 0.33 廓, 12 A MDmesh??II Power MOSFET TO-220, TO-220FP, D2PAK, I2PAK, TO-247
	STB30NM60N	768Kb / 18P	N-channel 600 V, 0.1 廓, 25 A, MDmesh??II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK

More results

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Аналогичный номер детали - STB11NM80_07

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