поискавой системы для электроныых деталей |
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STPS20170CG-TR датащи(PDF) 2 Page - STMicroelectronics |
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STPS20170CG-TR датащи(HTML) 2 Page - STMicroelectronics |
2 / 8 page STPS20170C 2/8 Table 3: Absolute Ratings (limiting values, per diode) Table 4: Thermal Parameters Table 5: Static Electrical Characteristics (per diode) Pulse test: * tp = 5 ms, δ < 2% ** tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 0.64 x IF(AV) + 0.011 IF 2 (RMS) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 170 V IF(RMS) RMS forward voltage 30 A IF(AV) Average forward current δ = 0.5 TO-220AB / D2PAK / I2PAK Tc = 155°C Per diode Per device 10 20 A TO-220FPAB Tc = 135°C Per diode Per device 10 20 IFSM Surge non repetitive forward current tp = 10ms sinusoidal 180 A PARM Repetitive peak avalanche power tp = 1µs Tj = 25°C 6700 W Tstg Storage temperature range -65 to + 175 °C Tj Maximum operating junction temperature * 175 °C dV/dt Critical rate of rise of reverse voltage 10000 V/µs * : thermal runaway condition for a diode on its own heatsink Symbol Parameter Value Unit Rth(j-c) Junction to case TO-220AB / D2PAK / I2PAK Per diode Total 2.2 1.3 °C/W TO-220FPAB Per diode Total 4.5 3.5 Rth(c) TO-220AB / D2PAK / I2PAK Coupling 0.3 TO-220FPAB 2.5 When the diodes 1 and 2 are used simultaneously: ∆ Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) Symbol Parameter Tests conditions Min. Typ Max. Unit IR * Reverse leakage current Tj = 25°C VR = VRRM 15 µA Tj = 125°C 15 mA VF ** Forward voltage drop Tj = 25°C IF = 10A 0.90 V Tj = 125°C 0.69 0.75 Tj = 25°C IF = 20A 0.99 Tj = 125°C 0.79 0.86 dPtot dTj --------------- 1 Rth j a – () -------------------------- < |
Аналогичный номер детали - STPS20170CG-TR |
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Аналогичное описание - STPS20170CG-TR |
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