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BTA201-600B датащи(PDF) 2 Page - NXP Semiconductors

номер детали BTA201-600B
подробное описание детали  1 A Three-quadrant triacs high commutation
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производитель  NXP [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo NXP - NXP Semiconductors

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BTA201_SER_B_E_ER_4
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 04 — 4 February 2008
2 of 12
NXP Semiconductors
BTA201 series B, E and ER
1 A Three-quadrant triacs high commutation
3.
Ordering information
4.
Limiting values
[1]
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 6 A/
µs.
Table 2.
Ordering information
Type number
Package
Name
Description
Version
BTA201-600B
TO-92
plastic single-ended leaded (through hole) package; 3 leads
SOT54
BTA201-600E
BTA201-800B
BTA201-800E
BTA201-800ER
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDRM
repetitive peak off-state voltage
BTA201-600B
[1] -
600
V
BTA201-600E
[1] -
600
V
BTA201-800B
-
800
V
BTA201-800E
-
800
V
BTA201-800ER
-
800
V
IT(RMS)
RMS on-state current
full sine wave; Tlead ≤ 54.3 °C; see
Figure 4 and 5
-1
A
ITSM
non-repetitive peak on-state current
full sine wave; Tj =25 °C prior to
surge; see Figure 2 and 3
t = 20 ms
-
12.5
A
t = 16.7 ms
-
13.7
A
I2tI2t for fusing
tp = 10 ms
-
0.78
A2s
dIT/dt
rate of rise of on-state current
ITM = 1.5 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
-
100
A/
µs
IGM
peak gate current
-
2
A
PGM
peak gate power
-
5
W
PG(AV)
average gate power
over any 20 ms period
-
0.1
W
Tstg
storage temperature
−40
+150
°C
Tj
junction temperature
-
125
°C


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