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BTA201-800E датащи(PDF) 2 Page - NXP Semiconductors |
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BTA201-800E датащи(HTML) 2 Page - NXP Semiconductors |
2 / 12 page BTA201_SER_B_E_ER_4 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 04 — 4 February 2008 2 of 12 NXP Semiconductors BTA201 series B, E and ER 1 A Three-quadrant triacs high commutation 3. Ordering information 4. Limiting values [1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 6 A/ µs. Table 2. Ordering information Type number Package Name Description Version BTA201-600B TO-92 plastic single-ended leaded (through hole) package; 3 leads SOT54 BTA201-600E BTA201-800B BTA201-800E BTA201-800ER Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDRM repetitive peak off-state voltage BTA201-600B [1] - 600 V BTA201-600E [1] - 600 V BTA201-800B - 800 V BTA201-800E - 800 V BTA201-800ER - 800 V IT(RMS) RMS on-state current full sine wave; Tlead ≤ 54.3 °C; see Figure 4 and 5 -1 A ITSM non-repetitive peak on-state current full sine wave; Tj =25 °C prior to surge; see Figure 2 and 3 t = 20 ms - 12.5 A t = 16.7 ms - 13.7 A I2tI2t for fusing tp = 10 ms - 0.78 A2s dIT/dt rate of rise of on-state current ITM = 1.5 A; IG = 0.2 A; dIG/dt = 0.2 A/µs - 100 A/ µs IGM peak gate current - 2 A PGM peak gate power - 5 W PG(AV) average gate power over any 20 ms period - 0.1 W Tstg storage temperature −40 +150 °C Tj junction temperature - 125 °C |
Аналогичный номер детали - BTA201-800E |
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Аналогичное описание - BTA201-800E |
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