IRFP250 datasheet(2/8 Pages) STMICROELECTRONICS

номер детали	IRFP250

подробное описание детали	N-CHANNEL 200V - 0.073ohm - 33A TO-247 PowerMesh II MOSFET

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IRFP250

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THERMAL DATA

AVALANCHE CHARACTERISTICS

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

ON (1)

DYNAMIC

Rthj-case

Thermal Resistance Junction-case Max

0.66

°C/W

Rthj-amb

Thermal Resistance Junction-ambient Max

30

°C/W

Rthc-sink

Thermal Resistance Case-sink Typ

0.1

°C/W

Tl

Maximum Lead Temperature For Soldering Purpose

300

°C

Symbol

Parameter

Max Value

Unit

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

33

A

EAS

Single Pulse Avalanche Energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

600

mJ

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS = 0

200

V

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

1µA

VDS = Max Rating, TC = 125 °C

50

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ±30V

±100

nA

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250 µA

23

4

V

RDS(on)

Static Drain-source On

Resistance

VGS = 10V, ID = 16A

0.073

0.085

Ω

ID(on)

On State Drain Current

VDS > ID(on) x RDS(on)max,

VGS =10V

33

A

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs

Forward Transconductance

VDS > ID(on) x RDS(on)max,

ID = 16A

10

25

S

Ciss

Input Capacitance

VDS = 25V, f = 1 MHz, VGS = 0

2850

pF

Coss

Output Capacitance

420

pF

Crss

Reverse Transfer

Capacitance

120

pF

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Аналогичное описание - IRFP250

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STW50NB20	88Kb / 8P	N - CHANNEL 200V - 0.047ohm - 50A - TO-247 PowerMESH MOSFET
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