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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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OP196GS датащи(PDF) 3 Page - Analog Devices |
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OP196GS датащи(HTML) 3 Page - Analog Devices |
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3 / 16 page  ELECTRICAL SPECIFICATIONS Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage VOS OP196G, OP296G, OP496G 35 300 µV 0 °C ≤ T A ≤ 125°C 650 µV OP296H, OP496H 800 µV 0 °C ≤ TA ≤ 125°C 1.2 mV Input Bias Current IB ±10 ±50 nA Input Offset Current IOS ±1 ±8nA Input Voltage Range VCM 0 3.0 V Common-Mode Rejection Ratio CMRR 0 V ≤ VCM ≤ 3.0 V, 0 °C ≤ T A ≤ 125°C60 dB Large Signal Voltage Gain AVO RL = 100 k Ω 80 200 V/mV Long-Term Offset Voltage VOS G Grade, Note 1 550 µV H Grade, Note 1 1 mV Offset Voltage Drift ∆VOS/∆T G Grade, Note 2 1.5 µV/°C H Grade, Note 2 2 µV/°C OUTPUT CHARACTERISTICS Output Voltage Swing High VOH IL = 100 µA 2.85 V Output Voltage Swing Low VOL IL = –100 µA70 mV POWER SUPPLY Supply Current per Amplifier ISY VOUT = 1.5 V, RL = ∞ 40 60 µA 0 °C ≤ TA ≤ 125°C80 µA DYNAMIC PERFORMANCE Slew Rate SR RL = 100 k Ω 0.25 V/ µs Gain Bandwidth Product GBP 350 kHz Phase Margin øm 45 Degrees NOISE PERFORMANCE Voltage Noise en p-p 0.1 Hz to 10 Hz 0.8 µV p-p Voltage Noise Density en f = 1 kHz 26 nV/ √Hz Current Noise Density in f = 1 kHz 0.19 pA/ √Hz NOTES 1Long-term offset voltage is guaranteed by a 1,000 hour life test performed on three independent lots at 12 5 °C, with an LTPD of 1.3. 2Offset voltage drift is the average of the 0 °C to 25°C delta and the 25°C to 125°C delta. Specifications subject to change without notice. OP196/OP296/OP496 REV. C –3– (@ VS = 3.0 V, VCM = 1.5 V, TA = 25 C, unless otherwise noted.) |
Аналогичный номер детали - OP196GS |
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Аналогичное описание - OP196GS |
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