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ISL54053_0709 датащи(PDF) 8 Page - Intersil Corporation |
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ISL54053_0709 датащи(HTML) 8 Page - Intersil Corporation |
8 / 11 page 8 FN6460.2 September 25, 2007 V+ and GND also power the internal logic and level shifters. The level shifters convert the input logic levels to switched V+ and GND signals to drive the analog switch gate terminals. This family of switches cannot be operated with bipolar supplies because the input switching point becomes negative in this configuration. Logic-Level Thresholds This switch family is 1.8V CMOS compatible (0.5V and 1.4V) over a supply range of 2V to 5V (see Figure 15). At 5V the VIH level is about 1.2V. This is still below the 1.8V CMOS guaranteed high output minimum level of 1.4V, but noise margin is reduced. The digital input stages draw supply current whenever the digital input voltage is not at one of the supply rails. Driving the digital input signals from GND to V+ with a fast transition time minimizes power dissipation. High-Frequency Performance In 50 Ω systems, the ISL54053 has a -3dB bandwidth of 190MHz (see Figure 16). The frequency response is very consistent over a wide V+ range, and for varying analog signal levels. An OFF switch acts like a capacitor and passes higher frequencies with less attenuation, resulting in signal feedthrough from a switch’s input to its output. Off isolation is the resistance to this feedthrough, while crosstalk indicates the amount of feedthrough from one switch to another. Figure 17 details the high off isolation and crosstalk rejection provided by this family. At 100kHz, off isolation is about 80dB in 50 Ω systems, decreasing approximately 20dB per decade as frequency increases. Higher load impedances decrease off isolation and crosstalk rejection due to the voltage divider action of the switch OFF impedance and the load impedance. Leakage Considerations ESD protection diodes are internally connected between each analog-signal pin and both V+ and GND. One of these diodes conducts if any analog signal exceeds V+ or GND. Virtually all the analog leakage current comes from the ESD diodes to V+ or GND. Although the ESD diodes on a given signal pin are identical and therefore fairly well balanced, they are reverse biased differently. Each is biased by either V+ or GND and the analog signal. This means their leakages will vary as the signal varies. The difference in the two diode leakages to the V+ and GND pins constitutes the analog- signal-path leakage current. All analog leakage current flows between each pin and one of the supply terminals, not to the other switch terminal. This is why both sides of a given switch can show leakage currents of the same or opposite polarity. There is no connection between the analog signal paths and V+ or GND. Typical Performance Curves TA = +25°C, Unless Otherwise Specified. FIGURE 9. ON-RESISTANCE vs SUPPLY VOLTAGE vs SWITCH VOLTAGE FIGURE 10. ON-RESISTANCE vs SWITCH VOLTAGE 0 0.5 1.0 1.5 2.0 2.5 VCOM (V) 01 2 3 4 5 V+ = 4.5V V+ = 1.8V V+ = 2.7V V+ = 5V V+ = 3V ICOM = 100mA VCOM (V) 012 3 5 0.2 0.3 0.4 0.5 0.6 0.8 0.9 1.0 4 +25°C +85°C -40°C V+ = 5V ICOM = 100mA 0.7 ISL54053 |
Аналогичный номер детали - ISL54053_0709 |
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Аналогичное описание - ISL54053_0709 |
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