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STPS20120CT датащи(PDF) 4 Page - STMicroelectronics |
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STPS20120CT датащи(HTML) 4 Page - STMicroelectronics |
4 / 9 page Characteristics STPS20120C 4/9 Figure 7. Relative variation of thermal impedance junction to case versus pulse duration (TO-220AB & I2PAK) Figure 8. Relative variation of thermal impedance junction to case versus pulse duration (TO-220FPAB) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.E-03 1.E-02 1.E-01 1.E+00 Z/R th(j-c) th(j-c) T δ=tp/T tp t (s) p Single pulse 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 Z/R th(j-c) th(j-c) T δ=tp/T tp t (s) p Single pulse Figure 9. Reverse leakage current versus reverse voltage applied (typical values, per diode) Figure 10. Junction capacitance versus reverse voltage applied (typical values, per diode) Figure 11. Forward voltage drop versus forward current (per diode) 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 0 10 20 30 40 50 60 70 80 90 100 110 120 I (mA) R V (V) R T =125°C j T =25°C j T =50°C j T =75°C j T =100°C j T =150°C j 10 100 1000 1 10 100 C(pF) V (V) R F=1MHz V =30mV T =25°C OSC RMS j 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 I (A) FM V (V) FM T =25°C (maximum values) j T =125°C (maximum values) j T =125°C (typical values) j |
Аналогичный номер детали - STPS20120CT |
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Аналогичное описание - STPS20120CT |
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