STN724 datasheet(4/11 Pages) STMICROELECTRONICS

номер детали	STN724

подробное описание детали	NPN medium power transistors

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Electrical characteristics

STF724 - STN724

4/11

2

Electrical characteristics

(Tcase = 25°C unless otherwise specified)

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICES

Collector cut-off current

(VBE = 0)

VCE = 60 V

10

µA

ICEO

Collector cut-off current

(IB = 0)

VCE = 30 V

100

µA

IEBO

Emitter cut-off current

(IC = 0)

VEB = 5 V

10

µA

V(BR)CBO

Collector-base breakdown

voltage (IE = 0)

IC = 100 µA

60

V

V(BR)CEO

(1)

1.

Pulsed duration = 300 µs, duty cycle

≤ 1.5 %

Collector-emitter

breakdown voltage (IB = 0)

IC = 10 mA

30

V

V(BR)EBO

Emitter-base breakdown

voltage (IC = 0)

IE = 100 µA

5V

VCE(sat)

(1)

Collector-emitter saturation

voltage

IC = 1 A

IB = 50 mA

IC = 2 A

IB = 100 mA

IC = 3 A

IB = 15 0mA

0.4

0.7

1.1

V

VBE(sat)

(1)

Base-emitter saturation

voltage

IC = 2 A

IB = 100 mA

1.2

V

hFE

DC current gain

IC = 100 mA

VCE = 2 V

IC = 1 A

VCE = 2 V

IC = 3 A

VCE = 2 V

100

80

30

300

fT

Transition frequency

VCE = 10 V

IC = 0.1 A

100

MHz

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