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74CB3T16211DGVRE4 датащи(PDF) 4 Page - Texas Instruments |
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74CB3T16211DGVRE4 датащи(HTML) 4 Page - Texas Instruments |
4 / 14 page SN74CB3T16211 24BIT FET BUS SWITCH 2.5V/3.3V LOW VOLTAGE BUS SWITCH WITH 5V TOLERANT LEVEL SHIFTER SCDS147B − OCTOBER 2003 − REVISED JANUARY 2005 4 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 simplified schematic, each FET switch (SW) A EN‡ B Control Circuit VG† † Gate voltage (VG) is equal to approximately VCC + VT when the switch is ON and VI > VCC + VT. ‡ Internal enable signal applied to the switch absolute maximum ratings over operating free-air temperature range (unless otherwise noted)† Supply voltage range, VCC (see Note 1) −0.5 V to 7 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Control input voltage range, VIN (see Notes 1 and 2) −0.5 V to 7 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Switch I/O voltage range, VI/O (see Notes 1, 2, and 3) −0.5 V to 7 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Control input clamp current, IIK (VIN < 0) −50 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I/O port clamp current, II/OK (VI/O < 0) −50 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ON-state switch current, II/O (see Note 4) ±128 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous current through VCC or GND terminals ±100 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Package thermal impedance, θJA (see Note 5): DGG package 64 °C/W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DGV package 48 °C/W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DL package 56 °C/W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ZQL package 42 °C/W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage temperature range, Tstg −65 °C to 150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. All voltages are with respect to ground, unless otherwise specified. 2. The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed. 3. VI and VO are used to denote specific conditions for VI/O. 4. II and IO are used to denote specific conditions for II/O. 5. The package thermal impedance is calculated in accordance with JESD 51-7. recommended operating conditions (see Note 6) MIN MAX UNIT VCC Supply voltage 2.3 3.6 V VIH High-level control input voltage VCC = 2.3 V to 2.7 V 1.7 5.5 V VIH High-level control input voltage VCC = 2.7 V to 3.6 V 2 5.5 V VIL Low-level control input voltage VCC = 2.3 V to 2.7 V 0 0.7 V VIL Low-level control input voltage VCC = 2.7 V to 3.6 V 0 0.8 V VI/O Data input/output voltage 0 5.5 V TA Operating free-air temperature −40 85 °C NOTE 6: All unused control inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report, Implications of Slow or Floating CMOS Inputs, literature number SCBA004. |
Аналогичный номер детали - 74CB3T16211DGVRE4 |
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Аналогичное описание - 74CB3T16211DGVRE4 |
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