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поискавой системы для электроныых деталей |
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SI9956DY датащи(PDF) 4 Page - Vishay Siliconix |
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SI9956DY датащи(HTML) 4 Page - Vishay Siliconix |
4 / 5 page ![]() Si9956DY Vishay Siliconix www.vishay.com S FaxBack 408-970-5600 4 Document Number: 70140 S-00652—Rev. L, 27-Mar-00 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Threshold Voltage Single Pulse Power Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) TJ – Temperature (_C) Time (sec) 0 0.1 0.2 0.3 0.4 0.5 0.6 02468 10 –0.8 –0.6 –0.4 –0.2 –0.0 0.2 0.4 –50 –25 0 25 50 75 100 125 150 TJ = 150_C TJ = 25_C 2 1 0.1 0.01 10–4 10–3 10–2 10–1 130 ID = 3.5 A ID = 250 µA 0.010 30 0 0.4 0.6 20 10 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 1.0 1.2 1.4 0.2 1 10 15 5 25 20 0.100 1.0 10 30 10 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 62.5_C/W 3. TJM – TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM 0.8 |
Аналогичный номер детали - SI9956DY |
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Аналогичное описание - SI9956DY |
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