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STW8NK80Z датащи(PDF) 5 Page - STMicroelectronics

номер детали STW8NK80Z
подробное описание детали  N-channel 800V - 1.3廓 - 6.2A - TO-220 /TO-220FP/TO-247 Zener-protected SuperMESH??Power MOSFET
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STP8NK80Z - STP8NK80ZFP - STW8NK80Z
Electrical characteristics
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Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
(1)
1.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Source-drain current
Source-drain current (pulsed)
6.2
24.8
A
A
VSD
(2)
2.
Pulse width limited by safe operating area
Forward on voltage
ISD = 6.2 A, VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 6.2 A, di/dt = 100 A/µs
VDD = 50 V, Tj = 150°C
(see Figure 23)
460
2990
13
ns
nC
A
Table 8.
Gate-source zener diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
BVGSO
(1)
1.
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Gate-source breakdown voltage Igs=± 1mA (Open Drain)
30
V


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