SMA540B datasheet(2/4 Pages) STMICROELECTRONICS

номер детали	SMA540B

подробное описание детали	Active Biased RF Transistor

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SMA540B

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Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Gms (1)

Maximum stable gain

Vd = 2V, Ic = 20mA

f = 1.8GHz

19

dB

|S21|2

Insertion power gain

Vd = 2V, Ic = 20mA

f = 1.8GHz

17.5

dB

F50Ω

Noise Figure

Vd = 2V, Ic = 5mA,

Zs = 50

Ω

f = 1.8GHz

1.3

dB

P-1dB

Output Power at 1dB

Compression Point

Vd = 2V, Ic = 20mA,

f = 1.8GHz

9

dBm

OIP3

Ouput third order intercept point

Vd = 2V, Ic = 20mA

f = 1.8GHz

19

dBm

CCB

Collector-base capacitance

Vcb = 2V, f = 1MHz

0.13

pF

CR

Current Ratio (Ic/IBias)IBias = 0.5mA, Vd = 2V

10

ELECTRICAL CHARACTERISTICS

(TA=25

oC,Z

L/S = 50Ω, tested in circuit shown in fig.1, unless otherwise specified )

RF In

Bias-T

I

Bias

R

Bias

I

D

V

D

RF Out

I

C

N.C.

Bias, 4

C, 3

B, 1

E, 2

Bias

Bias, 4

C, 3

B, 1

E, 2

Bias

Bias, 4

C, 3

B, 1

E, 2

Bias

Typical configuration (Fig. 1)

SOT343

4

12

3

Top view

Pin No.

Description

1

BASE

2

EMITTER

3

COLLECTOR

4BIAS

SOT343

PIN CONNECTION

Note(1): Gms = | S21 / S12 |

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