STB100NF03L-03-01 datasheet(1/11 Pages) STMICROELECTRONICS

номер детали	STB100NF03L-03-01

подробное описание детали	N-CHANNEL 30V - 0.0026 W -100A D짼PAK/I짼PAK/TO-220 STripFET??II POWER MOSFET

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February 2003

.

STB100NF03L-03 STP100NF03L-03

STB100NF03L-03-1

N-CHANNEL 30V - 0.0026

Ω -100A D²PAK/I²PAK/TO-220

STripFET™ II POWER MOSFET

s

TYPICAL RDS(on) = 0.0026 Ω

s

LOW THRESHOLD DRIVE

s

100% AVALANCHE TESTED

s

LOGIC LEVEL DEVICE

s

THROUGH-HOLE IPAK (TO-251) POWER

PACKAGE IN TUBE (SUFFIX “-1")

s

SURFACE-MOUNTING D2PAK (TO-263)

POWER PACKAGE IN TUBE (NO SUFFIX) OR

IN TAPE & REEL (SUFFIX “T4”)

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronis unique "Single Feature Size™"

strip-based

process.

The

resulting

transistor

shows extremely high packing density for low on-

resistance, rugged avalanche characteristics and

less critical alignment steps therefore a remark-

able manufacturing reproducibility.

APPLICATIONS

s

HIGH CURRENT, HIGH SWITCHING SPEED

s

MOTOR CONTROL, AUDIO AMPLIFIERS

s

DC-DC & DC-AC CONVERTERS

s

SOLENOID AND RELAY DRIVERS

TYPE

VDSS

RDS(on)

ID

STB100NF03L-03

STP100NF03L-03

STB100NF03L-03-01

30 V

<0.0032

Ω

<0.0032

Ω

<0.0032

Ω

100 A

1

2

3

1

3

D2PAK

TO-263

(Suffix “T4”)

TO-220

1

2

3

I2PAK

TO-262

(Suffix “-1”)

ABSOLUTE MAXIMUM RATINGS

(

•) Pulse width limited by safe operating area

(1) Current Limited by Package

(2) Starting Tj = 25 oC, IAR = 50A, VDD = 50V

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

30

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

30

V

VGS

Gate- source Voltage

± 16

V

ID(1)

Drain Current (continuous) at TC = 25°C

100

A

ID(1)

Drain Current (continuous) at TC = 100°C

100

A

IDM(•)

Drain Current (pulsed)

400

A

Ptot

Total Dissipation at TC = 25°C

300

W

Derating Factor

2

W/°C

EAS(2)

Single Pulse Avalanche Energy

1.9

J

Tstg

Storage Temperature

-55 to 175

°C

Tj

Operating Junction Temperature

INTERNAL SCHEMATIC DIAGRAM

Аналогичный номер детали - STB100NF03L-03-01

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STB100NF03L-03-1	461Kb / 15P	N-channel 30V - 0.0026ohm - 100A - D2PAK/I2/TO-220 STripFET TM III Power MOSFET

More results

Аналогичное описание - STB100NF03L-03-01

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STP210NF02	609Kb / 14P	N-CHANNEL 20V - 0.0026 ohm - 120A D짼PAK/I짼PAK/TO-220 STripFET??II POWER MOSFET
	STP200NF03	557Kb / 14P	N-CHANNEL 30V - 0.0032 ohm - 120A D짼PAK/I짼PAK/TO-220 STripFET??II POWER MOSFET
	STB160NF3LL	174Kb / 7P	N-CHANNEL 30V - 0.0026 ohm - 160A D2PAK STripFET??II POWER MOSFET May 2002
	STB95NF03	587Kb / 9P	N-CHANNEL 30V - 0.0065 ohm - 95A D짼PAK STripFET??II POWER MOSFET
	STP80NF03L-04	363Kb / 11P	N-CHANNEL 30V - 0.0035 W - 80A D2PAK/I2PAK/TO-220 STripFET??II POWER MOSFET
	STB55NF03L-1	338Kb / 11P	N-CHANNEL 30V - 0.01 W - 55A TO-220/D2PAK/I2PAK STripFET II POWER MOSFET March 2002
	STP100NF04L	268Kb / 8P	N-CHANNEL 40V - 0.0036 ohm - 100A TO-220 STripFET??II POWER MOSFET
	STP80NF03L	214Kb / 8P	N-CHANNEL 30V - 0.004 - 80A TO-220 STripFET II MOSFET January 2004
	STB75NF75	473Kb / 11P	N-CHANNEL 75V - 0.0095 ohm - 80A TO-220/TO-220FP/D짼PAK STripFET??II POWER MOSFET
	STB150NF55	551Kb / 14P	N-CHANNEL 55V - 0.005 ohm -120A D짼PAK/TO-220/TO-247 STripFET??II POWER MOSFET October 2002

More results

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Аналогичный номер детали - STB100NF03L-03-01

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