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STB30NS15 датащи(PDF) 1 Page - STMicroelectronics |
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STB30NS15 датащи(HTML) 1 Page - STMicroelectronics |
1 / 9 page 1/9 October 2001 STB30NS15 N-CHANNEL 150V - 0.075 Ω - 30A D2PAK LOW GATE CHARGE STripFET™ POWER MOSFET s TYPICAL RDS(on) = 0.075 Ω s EXCEPTIONAL dv/dt CAPABILITY s 100% AVALANCHE TESTED s APPLICATION ORIENTED CHARACTERIZATION s FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high- efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements. APPLICATIONS s HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROL TYPE VDSS RDS(on) ID STB30NS15 150 V <0.1 Ω 30 A 1 3 D2PAK TO-263 (Suffix “T4”) ABSOLUTE MAXIMUM RATINGS •) Pulse width limited by safe operating area. (1) ISD ≤ 30A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. (2) Starting Tj = 25 oC, ID = 15A, VDD = 25V Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 150 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 150 V VGS Gate- source Voltage ± 20 V ID Drain Current (continuos) at TC = 25°C 30 A ID Drain Current (continuos) at TC = 100°C 21 A IDM(•) Drain Current (pulsed) 120 A Ptot Total Dissipation at TC = 25°C 110 W Derating Factor 0.73 W/°C dv/dt (1) Peak Diode Recovery voltage slope 2 V/ns EAS (2) Single Pulse Avalanche Energy 250 mJ Tstg Storage Temperature -55 to 175 °C Tj Max. Operating Junction Temperature INTERNAL SCHEMATIC DIAGRAM |
Аналогичный номер детали - STB30NS15 |
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Аналогичное описание - STB30NS15 |
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