поискавой системы для электроныых деталей |
|
STB80NF12 датащи(PDF) 3 Page - STMicroelectronics |
|
STB80NF12 датащи(HTML) 3 Page - STMicroelectronics |
3 / 12 page 3/12 STB80NF12 STW80NF12 STP80NF12 STP80NF12FP SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. ( •)Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 50 V ID = 40 A RG = 4.7 Ω VGS = 10 V (Resistive Load, Figure 3) 40 145 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 80 V ID= 80 A VGS= 10V 140 23 51 189 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 50 V ID = 40 A RG = 4.7Ω, VGS = 10 V (Resistive Load, Figure 3) 134 115 ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) 80 320 A A VSD (*) Forward On Voltage ISD = 80 A VGS = 0 1.3 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 80 A di/dt = 100A/µs VDD = 35 V Tj = 150°C (see test circuit, Figure 5) 155 0.85 11 ns nC A ELECTRICAL CHARACTERISTICS (continued) Safe Operating Area Safe Operating Area for TO-220FP |
Аналогичный номер детали - STB80NF12 |
|
Аналогичное описание - STB80NF12 |
|
|
ссылки URL |
Конфиденциальность |
ALLDATASHEETRU.COM |
Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |