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STGP19NC60K датащи(PDF) 4 Page - STMicroelectronics |
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STGP19NC60K датащи(HTML) 4 Page - STMicroelectronics |
4 / 15 page Electrical characteristics STGB19NC60K - STGP19NC60K 4/15 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. Static Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)CES Collector-emitter breakdown voltage (VGE= 0) IC = 1 mA 600 V VCE(sat) Collector-emitter saturation voltage VGE = 15 V, IC = 12 A VGE = 15 V, IC = 12 A, Tc = 125 °C 2.0 1.8 2.75 V V ICES Collector cut-off current (VGE = 0) VCE = 600 V VCE = 600 V, TC = 125 °C 150 1 µA mA VGE(th) Gate threshold voltage VCE = VGE, IC = 250 µA 4.5 6.5 V IGES Gate-emitter leakage current (VCE = 0) VGE = ±20 V ±100 nA gfs (1) 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Forward transconductance VCE = 15 V , IC = 12 A 15 S Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Cies Coes Cres Input capacitance Output capacitance Reverse transfer capacitance VCE = 25 V, f = 1 MHz, VGE = 0 1170 127 28 pF pF pF Qg Qge Qgc Total gate charge Gate-emitter charge Gate-collector charge VCE = 480 V, IC = 12 A, VGE = 15 V (see Figure 17) 55 11 26 nC nC nC |
Аналогичный номер детали - STGP19NC60K |
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Аналогичное описание - STGP19NC60K |
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