STB9NC60-1 datasheet(1/10 Pages) STMICROELECTRONICS

номер детали	STB9NC60-1

подробное описание детали	N-CHANNEL 600V - 0.6ohm - 9A - D2PAK/I2PAK PowerMesh?줚I MOSFET

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February 2002

STB9NC60

STB9NC60-1

N-CHANNEL 600V - 0.6

Ω - 9A - D2PAK/I2PAK

PowerMesh™II MOSFET

(1)ISD ≤9A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

s

TYPICAL RDS(on) = 0.6 Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

NEW HIGH VOLTAGE BENCHMARK

s

GATE CHARGE MINIMIZED

DESCRIPTION

The PowerMESH

™II is the evolution of the first

generation of MESH OVERLAY

™. The layout re-

finements introduced greatly improve the Ron*area

figure of merit while keeping the device at the lead-

ing edge for what concerns swithing speed, gate

charge and ruggedness.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVER

ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

STB9NC60

STB9NC60-1

600 V

< 0.75

Ω

< 0.75

Ω

9.0 A

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

600

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

600

V

VGS

Gate- source Voltage

±30

V

ID

Drain Current (continuos) at TC = 25°C

9A

ID

Drain Current (continuos) at TC = 100°C

5.7

A

IDM (1)

Drain Current (pulsed)

36

A

PTOT

Total Dissipation at TC = 25°C

125

W

Derating Factor

1.0

W/°C

dv/dt

Peak Diode Recovery voltage slope

3.5

V/ns

Tstg

Storage Temperature

– 55 to 150

°C

Tj

Max. Operating Junction Temperature

D2PAK

I2PAK

1

3

1

2

3

INTERNAL SCHEMATIC DIAGRAM

Аналогичный номер детали - STB9NC60-1

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STB9NB50	93Kb / 8P	N - CHANNEL ENHANCEMENT MODE Power MESH MOSFET
STMicroelectronics	STB9NB60	93Kb / 9P	N - CHANNEL 600V - 0.7ohm - 9A - I2PAK/D2PAK PowerMESH MOSFET
VBsemi Electronics Co.,...	STB9NB60	1Mb / 10P	N-Channel 650V (D-S) Power MOSFET
STMicroelectronics	STB9NK50Z	572Kb / 12P	N-CHANNEL 500V - 0.72ohm - 7.2A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH??Power MOSFET June 2002
STMicroelectronics	STB9NK50Z	580Kb / 13P	N-CHANNEL 500V - 0.72W - 7.2A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH??Power MOSFET

More results

Аналогичное описание - STB9NC60-1

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STB9NB60	93Kb / 9P	N - CHANNEL 600V - 0.7ohm - 9A - I2PAK/D2PAK PowerMESH MOSFET
	STW10NC60	337Kb / 9P	N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh?줚I MOSFET
	STB6LNC60	422Kb / 9P	N-CHANNEL 600V - 1ohm - 5.8A D2PAK PowerMesh?줚I MOSFET
	STB4NC60	429Kb / 9P	N-CHANNEL 600V - 1.8ohm - 4.2A D2PAK PowerMesh?줚I MOSFET
	STB3NB60	90Kb / 9P	N - CHANNEL 600V - 3.3ohm - 3.3A - D2PAK/I2PAK PowerMESH MOSFET
	STB5NB60	93Kb / 9P	N - CHANNEL 600V - 1.8ohm - 5A - I2PAK/D2PAK PowerMESH MOSFET
	STB7NB60	99Kb / 9P	N - CHANNEL 600V - 1.0 OMH - 7.2A - I2PAK/D2PAK PowerMESH MOSFET
	STP5NC50	534Kb / 12P	N-CHANNEL 500V - 1.3ohm - 5.5A TO-220/FP/D2PAK/I2PAK PowerMesh?줚I MOSFET
	STB8NC50	441Kb / 9P	N-CHANNEL 500V - 0.7ohm - 8A D2PAK PowerMesh?줚I MOSFET
	STP4NC60	356Kb / 10P	N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh?줚I MOSFET

More results

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Аналогичный номер детали - STB9NC60-1

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