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STB9NC60-1 датащи(PDF) 3 Page - STMicroelectronics

номер детали STB9NC60-1
подробное описание детали  N-CHANNEL 600V - 0.6ohm - 9A - D2PAK/I2PAK PowerMesh?줚I MOSFET
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STB9NC60-1 датащи(HTML) 3 Page - STMicroelectronics

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STB9NC60 / STPBNC60-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
VDD = 300V, ID = 4.5 A
RG =4.7Ω VGS = 10V
(see test circuit, Figure 3)
20
ns
tr
Rise Time
16
ns
Qg
Total Gate Charge
VDD = 480V, ID = 9.0 A,
VGS = 10V
55
77
nC
Qgs
Gate-Source Charge
4.5
nC
Qgd
Gate-Drain Charge
31
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 300 V, ID = 4.5 A
RG = 4.7Ω VGS = 10 V
(Resistive Load see, Figure 3)
64
32
ns
ns
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 480V, ID = 9.0 A,
RG = 4.7Ω, VGS = 10V
(Inductive Load see, Figure 5)
19
13
32
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
9.0
A
ISDM (2)
Source-drain Current (pulsed)
36
A
VSD (1)
Forward On Voltage
ISD = 9 A, VGS = 0
1.6
V
trr
Reverse Recovery Time
ISD = 9 A, di/dt = 100A/µs,
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
600
ns
Qrr
Reverse Recovery Charge
4.7
µC
IRRM
Reverse Recovery Current
15.5
A
Thermal Impedance
Safe Operating Area


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