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STGW33IH120D датащи(PDF) 5 Page - STMicroelectronics |
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STGW33IH120D датащи(HTML) 5 Page - STMicroelectronics |
5 / 14 page STGW33IH120D Electrical characteristics 5/14 Table 6. Switching on/off (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr (di/dt)on Turn-on delay time Current rise time Turn-on current slope VCC = 960 V, IC = 20 A RG= 10 Ω, VGE= 15 V, (see Figure 17) 46 10 1660 ns ns A/µs td(on) tr (di/dt)on Turn-on delay time Current rise time Turn-on current slope VCC = 960 V, IC = 20 A RG= 10 Ω, VGE= 15 V, Tc= 125 °C (see Figure 17) 45 12 1500 ns ns A/µs tr(Voff) td(off) tf Off voltage rise time Turn-off delay time Current fall time VCC = 960 V, IC = 20 A RG= 10 Ω, VGE= 15 V, (see Figure 17) 102 284 180 ns ns ns tr(Voff) td(off) tf Off voltage rise time Turn-off delay time Current fall time VCC = 960 V, IC = 20 A RG= 10 Ω, VGE= 15 V, Tc= 125 °C (see Figure 17) 200 424 316 ns ns ns Table 7. Switching energy (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit Eon (1) Eoff (2) Ets 1. Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25°C and 125°C) 2. Turn-off losses include also the tail of the collector current Turn-on switching losses Turn-off switching losses Total switching losses VCC = 960 V, IC = 20 A RG= 10 Ω, VGE= 15 V, (see Figure 17) 1.5 3.4 4.9 mJ mJ mJ Eon (1) Eoff (2) Ets Turn-on switching losses Turn-off switching losses Total switching losses VCC = 960 V, IC = 20 A RG= 10 Ω, VGE= 15 V, Tc= 125 °C (see Figure 17) 2.3 6.4 8.7 mJ mJ mJ |
Аналогичный номер детали - STGW33IH120D |
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Аналогичное описание - STGW33IH120D |
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