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STGW38IH120D датащи(PDF) 4 Page - STMicroelectronics |
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STGW38IH120D датащи(HTML) 4 Page - STMicroelectronics |
4 / 14 page Electrical characteristics STGW38IH120D 4/14 2 Electrical characteristics (TCASE= 25 °C unless otherwise specified) Table 4. Static Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)CES Collector-emitter breakdown voltage (VGE = 0) IC = 1 mA 1200 V VCE(sat) Collector-emitter saturation voltage VGE= 15 V, IC= 20 A VGE= 15 V, IC= 20 A, Tc =125 °C 2.2 2.0 2.8 V V VGE(th) Gate threshold voltage VCE= VGE, IC= 1 mA 3.75 5.75 V ICES Collector-cut-off current (VGE = 0) VCE =1200 V VCE =1200 V, Tc=125 °C 500 10 µA mA IGES Gate-emitter leakage current (VCE = 0) VGE =± 20 V ± 100 nA gfs (1) 1. Pulsed: pulse duration= 300 µs, duty cycle 1.5% Forward transconductance VCE = 25 V, IC= 20 A 20 S Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Cies Coes Cres Input capacitance Output capacitance Reverse transfer capacitance VCE = 25 V, f = 1 MHz, VGE=0 2900 162 30 pF pF pF Qg Qge Qgc Total gate charge Gate-emitter charge Gate-collector charge VCE = 960 V, IC= 20 A,VGE=15 V 127 18 50 nC nC nC |
Аналогичный номер детали - STGW38IH120D |
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Аналогичное описание - STGW38IH120D |
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