STD7NS20 datasheet(3/8 Pages) STMICROELECTRONICS

номер детали	STD7NS20

подробное описание детали	N-CHANNEL 200V - 0.35ohm - 7A DPAK / IPAK MESH OVERLAY??MOSFET

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STD7NS20 / STD7NS20-1

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on Delay Time

VDD =100 V, ID = 3.5 A

RG = 4.7Ω VGS =10 V

(see test circuit, Figure 3)

10

ns

tr

Rise Time

15

ns

Qg

Total Gate Charge

VDD =160V, ID =18 A,

VGS =10V

31

45

nC

Qgs

Gate-Source Charge

7.5

nC

Qgd

Gate-Drain Charge

9

nC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

tr(Voff)

tf

tc

Off-voltage Rise Time

Fall Time

Cross-over Time

Vclamp = 160 V, ID =7A,

RG =4.7Ω, VGS = 10V

(see test circuit, Figure 5)

12

25

ns

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain Current

7

A

ISDM (2)

Source-drain Current (pulsed)

28

A

VSD (1)

Forward On Voltage

ISD = 7 A, VGS =0

1.5

V

trr

Reverse Recovery Time

ISD = 7 A, di/dt = 100A/µs

VDD =50V, Tj = 150°C

(see test circuit, Figure 5)

170

ns

Qrr

Reverse Recovery Charge

0.95

µC

IRRM

Reverse Recovery Current

11

A

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