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STD7NS20 датащи(PDF) 3 Page - STMicroelectronics |
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STD7NS20 датащи(HTML) 3 Page - STMicroelectronics |
3 / 8 page 3/8 STD7NS20 / STD7NS20-1 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD =100 V, ID = 3.5 A RG = 4.7Ω VGS =10 V (see test circuit, Figure 3) 10 ns tr Rise Time 15 ns Qg Total Gate Charge VDD =160V, ID =18 A, VGS =10V 31 45 nC Qgs Gate-Source Charge 7.5 nC Qgd Gate-Drain Charge 9 nC Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time Vclamp = 160 V, ID =7A, RG =4.7Ω, VGS = 10V (see test circuit, Figure 5) 12 12 25 ns ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 7 A ISDM (2) Source-drain Current (pulsed) 28 A VSD (1) Forward On Voltage ISD = 7 A, VGS =0 1.5 V trr Reverse Recovery Time ISD = 7 A, di/dt = 100A/µs VDD =50V, Tj = 150°C (see test circuit, Figure 5) 170 ns Qrr Reverse Recovery Charge 0.95 µC IRRM Reverse Recovery Current 11 A |
Аналогичный номер детали - STD7NS20 |
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Аналогичное описание - STD7NS20 |
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