STL9NK30Z datasheet(3/8 Pages) STMICROELECTRONICS

номер детали	STL9NK30Z

подробное описание детали	N-CHANNEL 300V - 0.36ohm - 9A PowerFLAT??Zener-Protected SuperMESH?줡ower MOSFET

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STL9NK30Z

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

ON/OFF

DYNAMIC

SWITCHING

SOURCE DRAIN DIODE

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%

VDSS.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID =1mA, VGS = 0

300

V

IDSS

Zero Gate Voltage

Drain Current (VGS =0)

VDS = Max Rating

VDS = Max Rating, TC = 125 °C

1

50

µA

IGSS

Gate-body Leakage

Current (VDS =0)

VGS = ± 20V

±10

µA

VGS(th)

Gate Threshold Voltage

VDS =VGS,ID = 50µA

3

3.75

4.5

V

RDS(on)

Static Drain-source On

Resistance

VGS =10V, ID = 4.5 A

0.36

0.4

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (1)

Forward Transconductance

VDS =10V, ID = 4.5 A

5.4

S

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS = 25V,f= 1MHz,VGS = 0

670

125

28

pF

Coss eq. (3)

Equivalent Output

Capacitance

VGS =0V, VDS = 0V to 440 V

70

pF

RG

Gate Input Resistance

f=1 MHz Gate DC Bias = 0

Test Signal Level = 20mV

Open Drain

3.6

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

tr

td(off)

tf

Turn-on Delay Time

Rise time

Turn-off Delay Time

Fall Time

VDD =150 V, ID = 4.5 A

RG = 4.7Ω VGS =10 V

(Resistive Load see, Figure 3)

16

20

36

10

ns

Qg

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD =240V, ID =9 A,

VGS =10V

25

5.5

13.4

35

nC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

ISDM (2)

Source-drain Current

Source-drain Current (pulsed)

9

36

A

VSD (1)

Forward On Voltage

ISD = 9 A, VGS =0

1.6

V

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 9 A, di/dt = 100A/µs

VDD =40V, Tj = 150°C

(see test circuit, Figure 5)

165

0.9

11.2

ns

µC

A

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