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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STN4NE03 датащи(PDF) 1 Page - STMicroelectronics |
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STN4NE03 датащи(HTML) 1 Page - STMicroelectronics |
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1 / 8 page  STN4NE03 N - CHANNEL 30V - 0.045 Ω - 4A - SOT-223 STripFET ™ POWER MOSFET s TYPICAL RDS(on) = 0.045 Ω s EXCEPTIONAL dv/dt CAPABILITY s AVALANCHE RUGGED TECHNOLOGY s 100% AVALANCHE TESTED s APPLICATION ORIENTED CHARACTERIZATION DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ” Single Feature Size ™ ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR CONTROL (DISK DRIVES, etc.) s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION s POWER MANAGEMENT IN BATTERY-OPERATED AND PORTABLE EQUIPMENT ® INTERNAL SCHEMATIC DIAGRAM August 1998 1 2 2 3 SOT-223 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Val ue Uni t VDS Drain-source Voltage (VGS =0) 30 V VDGR Drain- gate Voltage (RGS =20 k Ω) 30 V VGS Gate-source Voltage ± 20 V ID(*) Drain Current (cont inuous) at Tc =25 oC4 A ID(*) Drain Current (cont inuous) at Tc =100 oC2.5 A IDM( •) Drain Current (pulsed) 16 A Ptot Tot al Dissipation at Tc =25 oC2.5 W Derating Fact or 0. 02 W/ oC dv/dt (1) Peak Diode Recovery voltage slope 6 V/ ns Tstg St orage Temperature -65 to 150 oC Tj Max. Operat ing Junction Temperat ure 150 oC ( •) Pulse width limited by safe operating area (*) Limited by package (1)ISD ≤ 10A, di/dt ≤ 300A/µs, VDD ≤ V(BR)DSS,Tj ≤ TjMAX TYPE VDSS RDS(on) ID ST N4NE03 30 V < 0.06 Ω 4A 1/8 |
Аналогичный номер детали - STN4NE03 |
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Аналогичное описание - STN4NE03 |
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