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STP20NM505 датащи(PDF) 3 Page - STMicroelectronics

номер детали STP20NM505
подробное описание детали  N-CHANNEL 500V - 0.20ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET
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производитель  STMICROELECTRONICS [STMicroelectronics]
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STP20NM505 датащи(HTML) 3 Page - STMicroelectronics

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STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP
2 Electrical characteristics
3/16
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4.
On/off states
Table 5.
Dynamic
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-Source Breakdown
Voltage
ID = 250µA, VGS= 0
500
V
IDSS
Zero Gate Voltage Drain
Current (VGS = 0)
VDS = Max Rating,
VDS = Max Rating,Tc = 125°C
1
10
µA
µA
IGSS
Gate Body Leakage Current
(VDS = 0)
VGS = ±30V
±
100
µA
VGS(th)
Gate Threshold Voltage
VDS= VGS, ID = 250 µA
34
5
V
RDS(on)
Static Drain-Source On
Resistance
VGS= 10 V, ID= 10 A
0.20
0.25
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs Note 4
Forward Transconductance
VDS > ID(ON) xRDS(ON)max,
ID = 10A
10
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS =25V, f=1 MHz, VGS=0
1480
285
34
pF
pF
pF
Coss eq.
Note 5
Equivalent Ouput Capacitance VGS=0, VDS =0V to 400V
130
pF
Rg
Gate Input Resistance
f=1MHz Gate DC Bias=0
Test Signal Level=20mV
Open Drain
1.6
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD=400V, ID = 20A
VGS =10V
(see Figure 15)
40
13
19
56
nC
nC
nC


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