STP4NB100 datasheet(2/9 Pages) STMICROELECTRONICS

номер детали	STP4NB100

подробное описание детали	N - CHANNEL 1000V - 4ohm - 3.8A - TO-220/TO-220FP PowerMESH MOSFET

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THERMAL DATA

TO-220

TO-220FP

Rthj-case

Thermal Resistance Junction-case

Max

1

3. 12

oC/W

Rthj-amb

Rthc-sink

T l

Thermal Resistance Junction-ambient

Max

Thermal Resistance Case-sink

Typ

Maximum Lead Temperature F or Soldering Purpose

62.5

0.5

300

oC/W

oC

AVALANCHE CHARACTERISTICS

Symbo l

Parameter

Max Value

Unit

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

3.8

A

EAS

Single Pulse Avalanche Energy

(starting Tj =25

oC, ID =IAR,VDD =50 V)

360

mJ

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

OFF

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID =250

µAVGS =0

1000

V

IDSS

Zero Gat e Voltage

Drain Current (VGS =0)

VDS =Max Rating

VDS =Max Rat ing

Tc =125

oC

1

50

µA

IGSS

Gat e-body Leakage

Current (VDS =0)

VGS =

± 30 V

± 100

nA

ON (

∗)

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

VGS(th)

Gat e Threshold Voltage VDS =VGS ID = 250

µA

345

V

RDS(on)

Static Drain-source On

Resistance

VGS =10 V

ID =2 A

4

4. 4

Ω

ID(o n)

On State Drain Current

VDS >ID(o n) xRDS(on )max

VGS =10 V

3. 8

A

DYNAMIC

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

gfs (

∗)Forward

Transconductance

VDS >ID(o n) xRDS(on )max

ID =2 A

1. 5

3

S

Ciss

Cos s

Crss

Input Capacitance

Out put Capacitance

Reverse Transfer

Capacitance

VDS = 25V

f = 1MHz

VGS = 0

1400

117

7

pF

STP4NB100/STP4NB100FP

2/9

Аналогичный номер детали - STP4NB100

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STP4NB30	331Kb / 9P	N-CHANNEL 300V - 1.8ohm - 4A - TO-220/TO-220FP PowerMesh??MOSFET
	STP4NB30FP	331Kb / 9P	N-CHANNEL 300V - 1.8ohm - 4A - TO-220/TO-220FP PowerMesh??MOSFET
	STP4NB50	163Kb / 7P	N-CHANNEL 500V - 2.5ohm - 3.8A - TO-220/TO-220FP PowerMesh??MOSFET
VBsemi Electronics Co.,...	STP4NB50	1Mb / 9P	N-Channel 650 V (D-S) MOSFET
STMicroelectronics	STP4NB50FP	163Kb / 7P	N-CHANNEL 500V - 2.5ohm - 3.8A - TO-220/TO-220FP PowerMesh??MOSFET

More results

Аналогичное описание - STP4NB100

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STP4NB50	163Kb / 7P	N-CHANNEL 500V - 2.5ohm - 3.8A - TO-220/TO-220FP PowerMesh??MOSFET
	STP2HNC60	328Kb / 9P	N-CHANNEL 600V - 4ohm - 2.2A TO-220/TO-220FP PowerMesh?줚I MOSFET
	STP5NB100	106Kb / 9P	N - CHANNEL 1000V - 2.4ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET
	STW5NB100	54Kb / 5P	N - CHANNEL 1000V - 4ohm - 4.3A - TO-247 PowerMESH MOSFET
	STP3NB100	44Kb / 6P	N - CHANNEL 1000V - 5.3 ohm - 3 A - TO-220/TO-220FP PowerMESH MOSFET
	STP4NB30FP	331Kb / 9P	N-CHANNEL 300V - 1.8ohm - 4A - TO-220/TO-220FP PowerMesh??MOSFET
	STP3NB80	106Kb / 9P	N - CHANNEL 800V - 4.6ohm - 2.6A - TO-220/TO-220FP PowerMESH MOSFET
	STP5NB80	107Kb / 9P	N - CHANNEL 800V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET
	STP7NB80	106Kb / 9P	N - CHANNEL 800V - 1.2ohm - 6.5A - TO-220/TO-220FP PowerMESH MOSFET
	STP4NB80	354Kb / 9P	N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESH MOSFET

More results

STP4NB100 датащи(PDF) 2 Page - STMicroelectronics

STP4NB100 датащи(HTML) 2 Page - STMicroelectronics

Аналогичный номер детали - STP4NB100

Аналогичное описание - STP4NB100

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