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STP7NB60 датащи(PDF) 2 Page - STMicroelectronics

номер детали STP7NB60
подробное описание детали  N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP7NB60 датащи(HTML) 2 Page - STMicroelectronics

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THERMAL DATA
TO-220
T O220-F P
Rthj-ca se
Thermal Resist ance Junction-case
Max
1.0
3.13
oC/W
Rthj- amb
Rthc- si nk
Tl
Thermal Resist ance Junction-ambient
Max
Thermal Resist ance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
62. 5
0.5
300
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symb ol
Parameter
Max Valu e
Uni t
IAR
Avalanche Current, Repetitive or Not -Repetitive
(pulse width limited by Tj max,
δ <1%)
7.2
A
EAS
Single Pulse Avalanche Energy
(starting Tj =25
oC, ID =IAR,VDD =50 V)
580
mJ
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
OFF
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
V(BR)DSS
Drain-source
Breakdown Volt age
ID = 250
µAVGS =0
600
V
IDSS
Zero Gat e Voltage
Drain Current (VGS =0)
VDS =Max Rating
VDS = Max Rating
Tc = 125
oC
1
50
µA
µA
IGSS
Gate-body Leakage
Current (VDS =0)
VGS =
± 30 V
± 100
nA
ON (
∗)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
VGS(th)
Gate T hreshold Voltage VDS =VGS
ID =250
µA
34
5
V
RDS( on)
St atic Drain-source O n
Resistance
VGS = 10V
ID = 3.6 A
1.0
1.2
ID(o n)
On Stat e Drain Current
VDS >ID(on) xRDS(on)max
VGS =10 V
7. 2
A
DYNAMIC
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
gfs (
∗)Forward
Transconductance
VDS >ID(on) xRDS(on) max
ID =3.6 A
4
5.3
S
Ciss
Coss
Crss
Input Capacitance
Output Capacit ance
Reverse Transfer
Capacitance
VDS = 25V
f = 1MHz
VGS = 0
1250
165
16
1625
223
22
pF
pF
pF
STP7NB60/FP
2/9


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