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FDD5353 датащи(PDF) 2 Page - Fairchild Semiconductor

номер детали FDD5353
подробное описание детали  N-Channel Power Trench짰 MOSFET 60V, 50A, 12.3m廓
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производитель  FAIRCHILD [Fairchild Semiconductor]
домашняя страница  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDD5353 датащи(HTML) 2 Page - Fairchild Semiconductor

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©2008 Fairchild Semiconductor Corporation
FDD5353 Rev.C
Electrical Characteristics T
J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V
60
V
∆BV
DSS
∆T
J
Breakdown Voltage Temperature
Coefficient
ID = 250µA, referenced to 25°C
77
mV/°C
IDSS
Zero Gate Voltage Drain Current
VGS = 0V, VDS = 48V,
1
µA
IGSS
Gate to Source Leakage Current
VGS = ±20V, VDS = 0V
±100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA
1.0
1.8
3.0
V
∆V
GS(th)
∆T
J
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250µA, referenced to 25°C
-8
mV/°C
rDS(on)
Static Drain to Source On Resistance
VGS = 10V, ID = 10.7A
10.1
12.3
m
VGS = 4.5V, ID = 9.5A
12.1
15.4
VGS = 10V, ID = 10.7A, TJ = 125°C
16.7
20.3
gFS
Forward Transconductance
VDD = 5V, ID = 10.7A
41
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 30V, VGS = 0V,
f = 1MHz
2420
3215
pF
Coss
Output Capacitance
215
285
pF
Crss
Reverse Transfer Capacitance
120
180
pF
Rg
Gate Resistance
f = 1MHz
1.7
Switching Characteristics
td(on)
Turn-On Delay Time
VDD = 30V, ID = 10.7A,
VGS = 10V, RGEN = 6Ω
11
20
ns
tr
Rise Time
6
11
ns
td(off)
Turn-Off Delay Time
36
58
ns
tf
Fall Time
4
10
ns
Qg
Total Gate Charge
VGS = 0V to 10V
VDD = 30V,
ID = 10.7A
46
65
nC
Qg
Total Gate Charge
VGS = 0V to 4.5V
23
32
nC
Qgs
Gate to Source Charge
7
nC
Qgd
Gate to Drain “Miller” Charge
9
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0V, IS = 10.7A
(Note 2)
0.8
1.3
V
VGS = 0V, IS = 2.6A
(Note 2)
0.7
1.2
trr
Reverse Recovery Time
IF = 10.7A, di/dt = 100A/µs
28
45
ns
Qrr
Reverse Recovery Charge
21
34
nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθJA is determined by the user’s board design.
2: Pulse Test: Pulse Width < 300
µs, Duty cycle < 2.0%.
3: Starting TJ = 25°C, L = 3mH, IAS = 13A, VDD = 60V, VGS = 10V.
40°C/W when mounted on a
1 in2 pad of 2 oz copper
96°C/W
when
mounted
on a minimum pad.
a)
b)


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