поискавой системы для электроныых деталей |
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FDS8876 датащи(PDF) 6 Page - Fairchild Semiconductor |
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FDS8876 датащи(HTML) 6 Page - Fairchild Semiconductor |
6 / 12 page ©2007 Fairchild Semiconductor Corporation FDS8876 Rev. B www.fairchildsemi.com 6 Figure 11. 0.90 0.95 1.00 1.05 1.10 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) ID = 250µA Normalized Drain to Source Breakdown Voltage vs Junction Temperature Figure 12. 100 1000 0.1 1 10 3000 30 VGS = 0V, f = 1MHz CISS = CGS + CGD COSS ≅ CDS + CGD CRSS = CGD VDS, DRAIN TO SOURCE VOLTAGE (V) Capacitance vs Drain to Source Voltage Figure 13. 0 2 4 6 8 10 0 5 10 15 20 25 30 Qg, GATE CHARGE (nC) VDD = 15V ID = 12.5A ID = 1A WAVEFORMS IN DESCENDING ORDER: Gate Charge Waveforms for Constant Gate Currents Figure 14. Forward Bias Safe Operating Area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 DC 10s 1s 100ms 10ms 1ms 100us VDS, DRAIN to SOURCE VOLTAGE (V) 200 THIS AREA IS LIMITED BY r DS(on) SINGLE PULSE TJ = MAX RATED RθJA = 125 oC/W TA = 25 oC Typical Characteristics T J = 25°C unless otherwise noted |
Аналогичный номер детали - FDS8876_07 |
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Аналогичное описание - FDS8876_07 |
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