поискавой системы для электроныых деталей |
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FDS8870 датащи(PDF) 3 Page - Fairchild Semiconductor |
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FDS8870 датащи(HTML) 3 Page - Fairchild Semiconductor |
3 / 12 page ©2007 Fairchild Semiconductor Corporation FDS8870 Rev. B www.fairchildsemi.com 3 Switching Characteristics (VGS = 10V) Drain-Source Diode Characteristics Notes: 1: Starting TJ = 25°C, L = 1mH, IAS = 29A, VDD = 30V, VGS = 10V. 2: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. a) 50°C/W when mounted on a 1in2 pad of 2 oz copper. b) 125°C/W when mounted on a minimum pad. tON Turn-On Time VDD = 15V, ID = 18A VGS = 10V, RGS = 3.3Ω - - 86 ns td(ON) Turn-On Delay Time - 9 - ns tr Rise Time - 48 - ns td(OFF) Turn-Off Delay Time - 60 - ns tf Fall Time - 21 - ns tOFF Turn-Off Time - - 122 ns VSD Source to Drain Diode Voltage ISD = 18A - - 1.25 V ISD = 2.1A - - 1.0 V trr Reverse Recovery Time ISD = 18A, dISD/dt = 100A/µs - - 37 ns QRR Reverse Recovered Charge ISD = 18A, dISD/dt = 100A/µs - - 22 nC |
Аналогичный номер детали - FDS8870 |
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Аналогичное описание - FDS8870 |
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